Properties of advanced semiconductor materials
GaN, AlN, InN, BN, SiC, SiGe
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Contributions
- Levinshteĭn, M. E. - Contributor
- Rumyantsev, Sergey L - Contributor
- Shur, Michael - Contributor
Publication
2001 - Wiley, New York, New York (State)
Language
English
Word Count
48,500 words, Guess
Page Count
194 pages
Identifiers
- Open LibraryOL17004896M
- ISBN-100471358274
- OCLC Control Number44174231
- Library of Congress Control Number00042262
- Goodreads4402971
Classifications
- LCCQC611 .P78 2001
Subjects
Other Editions
- Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, SiGe
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