Ferroelectric-Gate Field Effect Transistor Memories
Device Physics and Applications
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Publication
2016 - Springer London, Limited
Language
English
Word Count
0 words, Guess
Page Count
0 pages
Identifiers
- ISBN-139789402408416
- ISBN-10940240841X
- Better World Books9789402408416
- Open LibraryOL37263937M
Classifications
- LCCTK7867-7867.5
Subjects
Other Editions
- Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
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