Author

Publication

2000-09-15 - Academic Press

Language

English

Word Count

75,000 words, Guess

Page Count

300 pages

Physical Format

Hardcover

Identifiers

First Sentence

With the wave of new generation magnetic technology, that is, magnetoelectronic devices such as magnetoresistive random access memory (MRAM), the need to understand the magnetization process on a length scale much below a micron is becoming increasingly important [1, 2].

Subjects

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