Design of Shallow p-type Dopants in ZnO (Presentation)
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Author
Contributions
- Li, J. - Contributor
- Yan. Y. - Contributor
- United States. Department of Energy - Contributor
- National Renewable Energy Laboratory (U.S.) - Contributor
- United States. Department of Energy. Office of Scientific and Technical Information - Contributor
and 1 more
- IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.) - Contributor
Publication
2008 - distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, Washington, D.C, District of Columbia
Language
English
Word Count
8,000 words, Guess
Page Count
32 pages
Physical Format
Electronic resource
Identifiers
- OCLC Control Number727355702
- Open LibraryOL43959303M
Description
ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
Subjects
Series Statement
- NREL/PR -- 520-43248
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