Fundamentals of modern VLSI devices
2nd ed.
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Author
Contributions
- Ning, Tak H., 1943- - Contributor
Publication
2009 - Cambridge University Press, Cambridge, England
Language
English
Word Count
164,000 words, Guess
Page Count
656 pages
Identifiers
- Internet Archivefundamentalsmode00taur
- Internet Archivefundamentalsofmo0000taur_n4y6
- ISBN-139780521832946
- ISBN-100521832942
- Library of Congress Control Number2009007334
and 3 more
- OCLC Control Number268793821
- Better World Books9780521832946
- Open LibraryOL23174661M
Classifications
- DDC621.39/5
- LCCTK7871.99.M44 T38 2009
- LCCTK7871.99.M44 T38 20
Description
The great advances made in VLSI technology in recent years have been underpinned by rapid developments in the design and fabrication of CMOS and bipolar devices, particularly at the deep submicron level. This book examines in detail the basic properties and design of these devices, including chip integration, and discusses the various factors that affect their performance. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.
Subjects
Topics
Other Editions
- Fundamentals of modern VLSI devices
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