Molekularstrahlepitaxie und Charakterisierung von pseudomorphen In[gamma]Ga1-[gamma]As-Kanalschichten [IngammaGa1-gammaAs-Kanalschichten] für die Anwendung in Submikron-Heterostruktur-Feldeffekttransistoren
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Author
Contributions
- Gesamthochschule Duisburg - Contributor
Publication
1994 - s.n., s.l., Germany
Language
German
Word Count
50,750 words, Guess
Page Count
203 pages
Identifiers
- OCLC Control Number75605254
- Open LibraryOL50041892M
Subjects
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