Optical Properties of III-V Semiconductors
the Influence of Multi-Valley Band Structures
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Author
Publication
1996 - Springer Berlin Heidelberg, Berlin, Heidelberg, Germany
Language
English
Word Count
49,750 words, Guess
Page Count
199 pages
Physical Format
[electronic resource] :
Identifiers
- Open LibraryOL27078900M
- ISBN-139783642582844
- ISBN-103642582842
- OCLC Control Number840292525
- OCLC Control Numberopticalpropertie00kalt
Classifications
- DDC621.36
- LCCQC350-467
Description
Optical and electronic properties of semiconductors are strongly influenced by the different possibilities of carriers to be distributed among the various extrema of the band structure or the transfer between them. The monograph Optical Properties of III-V Semiconductors is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on performance features in opto-electronic devices. The optical response of such materials with multi-valley band structures is determined by many-body effects like screening, gap narrowing, Fermi-edge singularity, electron-hole droplet formation, etc. The discussion is self-consistent with the dynamics of excitons and carriers from intervalley compiling.
Subjects
Series Statement
- Springer Series in Solid-State Sciences, 0171-1873 -- 120
Links
Other Editions
- Optical Properties of III-V Semiconductors: the Influence of Multi-Valley Band Structures
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