Differential capacitance-voltage profiling of schottky barrier diodes for measuring implanted depth distributions in silicon
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Author
Contributions
- Jamba, Douglas M. - Contributor
- United States. National Bureau of Standards. - Contributor
- United States. Advanced Research Projects Agency. - Contributor
- Hughes Aircraft Company. Research Laboratories. - Contributor
Publication
1982 - National Technical Information Service, distributor, Washington, D.C, District of Columbia
Language
English
Word Count
13,000 words, Guess
Page Count
52 pages
Identifiers
- Library of Congress Control Number81600162
- Open LibraryOL3919278M
Classifications
- LCCQC100 .U57 no. 400-71
- LCCTK7871.89.S35 .U57 no. 400-71
Subjects
Topics
Series Statement
- NBS special publication ;
- 400-71
- Semiconductor measurement technology
Other Editions
- Differential capacitance-voltage profiling of schottky barrier diodes for measuring implanted depth distributions in silicon
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