Simulation of Semiconductor Processes and Devices 2001
SISPAD 01
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Author
Contributions
- Tsamis, Christos - Contributor
Publication
2001 - Springer Vienna, Vienna, Austria
Language
English
Word Count
114,250 words, Guess
Page Count
457 pages
Physical Format
Electronic resource
Identifiers
- Open LibraryOL27087684M
- Internet Archivesimulationsemico01yuzh
- ISBN-103709172780
- ISBN-103709162440
- ISBN-139783709172780
and 4 more
- ISBN-139783709162446
- OCLC Control Number851367689
- Better World Books9783709172780
- Better World Books9783709162446
Classifications
- DDC621.381
- LCCTK7800-8360
- LCCTK7874-7874.9
and 1 more
- LCCTK7800-8360TK7874-78
Description
This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
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