Process and Device Simulation for MOS-VLSI Circuits
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Author
Contributions
- Antoniadis, Dimitri A. - Contributor
- Dutton, Robert W. - Contributor
- Oldham, William G. - Contributor
Publication
1983 - Springer Netherlands, Dordrecht, Netherlands
Language
English
Word Count
159,000 words, Guess
Page Count
636 pages
Physical Format
Electronic resource
Identifiers
- Internet Archiveprocessdevicesim00anto_706
- ISBN-109400968426
- ISBN-139789400968424
- OCLC Control Number840306203
- Better World Books9789400968424
and 1 more
- Open LibraryOL27082929M
Classifications
- LCCTK7867-7867.5
Alternate Titles
- Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982
Subjects
Series Statement
- NATO ASI Series, Series E: Applied Sciences, 0168-132X -- 62
- NATO ASI series -- 62.
Links
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