The theoretical and experimental study of the temperature and dopant density dependence of hole mobility, effective mass, and resistivity in boron-doped silicon
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Author
Contributions
- United States. Defense Advanced Research Projects Agency. - Contributor
- National Science Foundation (U.S.) - Contributor
Publication
1979 - U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., Washington, District of Columbia
Language
English
Word Count
10,500 words, Guess
Page Count
42 pages
Identifiers
- Open LibraryOL4734894M
- OCLC Control Number4503980
- Library of Congress Control Number78024185
Classifications
- DDC602/.1 s
- LCCQC100 .U57 no. 400-47
Subjects
Topics
Series Statement
- Semiconductor measurement technology
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